Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

Hybrid Type-I InAs/GaAs and Type-II GaSb/GaAs Quantum Dot Structure with Enhanced Photoluminescence

Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover.

Thermopower in p-type GaAs/AlGaAs layers

We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range 0.2 K≤T≤1.2 K. We calculate both the diffusion Sd and the phonon-drag Sg contributions to the thermopower. We find that Sd is significant for temperatures up to ∼ 0.3 K while at higher temperatures Sg dominates. The calculated and measured Sg agree very well with no adjustable paramet...

Characteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...

OPTICAL STUDIES OF TYPE I AND TYPE II RECOMBINATION IN GaAs-AlAs QUANTUM WELLS

In this paper we report the results of a systematic investigation on the effects of electronic coupling on a series of G&-rmlt' l e quantum well samples in which the thickness of the G& layers was fixed a t s 2 5 L d the AlAs thickness varied between samples from 392 t o 62. Using the techniques of photoluminescence and p h o t o l ~ s c e n c e xcitation spectroscopy we have followed the posit...